| PART |
Description |
Maker |
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| MTD2006F |
Power ICs / Stepper Motor Drivers (MTD Series) Operation : Bipolar
Dual full-bridge for a bipolar motor
|
Shindengen Electric Mfg.Co.Ltd
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
| 2015M 2015M-2 |
15 W, 28 V, 2000 MHz, microwave CW bipolar
MICROWAVE BIPOLAR
MICROWAVEBIPOLAR
|
Acrian
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| MAX1156-MAX1174 MAX1174ACUP MAX1174AEUP MAX1174BCU |
14-Bit 135ksps Single-Supply ADCs with Bipolar Analog Input Range
14-Bit / 135ksps / Single-Supply ADCs with Bipolar Analog Input Range
"14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range"
1300/8000 Series Lucent STII Fiber Die
14-Bit, 135ksps, Single-Supply ADCs with Bipolar Analog Input Range 1-CH 14-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO20
14-Bit.135ksps.Single-Supply ADCs with Bipolar Analog Input Range
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| 2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
|
SEME-LAB[Seme LAB]
|
| NE576N NE576D SA576N NE576 SA576 SA576D |
COMPANDER,BIPOLAR,DIP,14PIN,PLASTIC
COMPANDER,BIPOLAR,SOP,14PIN,PLASTIC
From old datasheet system
Low Power Compandor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| XR2206 XR-2206P XR-2206D XR-2206CP XR-2206M XR2206 |
Monolithic Function Generator
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,DIP,16PIN,PLASTIC
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,SOP,16PIN,PLASTIC
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,DIP,16PIN,CERAMIC
From old datasheet system
|
EXAR[Exar Corporation]
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
